Author:
Coss Brian,Kim Hyun-Chul,Aguirre-Tostado Francisco S.,Wallace Robert M.,Kim Jiyoung
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. P. Sivasubramani, T.S. Böscke, J. Huang, C.D. Young, P.D. Kirsch, S.A. Krishnan, M.A. Quevedo-Lopez, S. Govindarajan, B.S. Ju, H.R. Harris, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, J. Kim, B.E. Gnade, R.M. Wallace, G. Bersuker, B.H. Lee, R. Jammy, VLSI Conf. Tech. Dig., 68, Kyoto, Japan, 2007 68–69.
3. Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications
4. Metal gate technology for nanoscale transistors—material selection and process integration issues
5. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
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