Influence of injection level of charge carriers in nanostructured porous silicon on electroluminescence quantum efficiency-Reference-Cited by-同舟云学术

Influence of injection level of charge carriers in nanostructured porous silicon on electroluminescence quantum efficiency

Published:2005-08 Issue:2-4 Volume:81 Page:288-292
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Timokhov D.F.,Timokhov F.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. D.F. Timokhov, F.P. Timokhov, V.I. Soloshenko, in: Works of the Second International Scientific – Practical Conference “Modern Information and Electronic Technologies”, 28–31 May 2001, Odessa, Ukraine, pp. 298–299.

2. Increase of photoluminescence quantum efficiency of porous silicon layers by optimization of anodization parameters

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