A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices-Reference-Cited by-同舟云学术

A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Published:2009-07 Issue:7-9 Volume:86 Page:1568-1570
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Longo P.,Paterson G.W.,Holland M.C.,Thayne I.G.,Craven A.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

2. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

3. Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

4. Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices

5. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence properties of β-Ga2O3:Tb3+ nanofibers prepared by electrospinning;Materials Science and Engineering: B;2011-07

2. An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices;Journal of Physics: Conference Series;2010-07-01