In situ characterization of Cu CMP slurry and defect reduction using IR thermal camera-Reference-Cited by-同舟云学术

In situ characterization of Cu CMP slurry and defect reduction using IR thermal camera

Published:2004-09 Issue:3 Volume:75 Page:257-262
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chan Chia-Hao,Chen Jem Kun,Chang Feng-Chih

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. M.T. Bohr, in: Proceedings of the 1995 IEEE International Electron Device Meeting, 1995, pp. 241–42

2. K.H. Holland et al., Achieving CMP Manufacturability in the Current Aluminum and Future Copper Damascene Interconnection Technologies, Semiconductor Fabtech, eigth ed., 1998, p. 217

3. P. Stocckl, B. Saville, J. Kavanagh, T. Dellwig, Advanced Cu CMP defect excursion control for leading edge micro-processor manufacturing in: Advanced Semiconductor Manufacturing IEEE/SEMI Conference and Workshop, 2002, pp. 92–97

4. Chemical Mechanical Planarization of Copper Damascene Structures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low-damage copper removal process by femtosecond laser for integrated circuits;Vacuum;2022-09

2. Surface Measurement of GLSI Wafer with Copper Interconnects after CMP;Advanced Materials Research;2012-02

3. Effect of alkaline slurry on the electric character of the pattern Cu wafer;Journal of Semiconductors;2011-07

4. Mechanical effects of polishing pad in copper electrochemical mechanical deposition for planarization;Current Applied Physics;2010-01

5. Nonlinear Dynamics Modeling of Correlated Functional Process Variables for Condition Monitoring in Chemical–Mechanical Planarization;IEEE Transactions on Semiconductor Manufacturing;2009-02