Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors-Reference-Cited by-同舟云学术

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Published:2018-02 Issue: Volume:187-188 Page:134-138
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Tikhov S.V.,Mikhaylov A.N.^ORCID,Belov A.I.,Korolev D.S.,Antonov I.N.,Karzanov V.V.,Gorshkov O.N.,Tetelbaum D.I.,Karakolis P.,Dimitrakis P.

Funder

Ministry for Education and Science of the Russian Federation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Electrically tailored resistance switching in silicon oxide;Mehonic;Nanotechnology,2012

5. Bipolar resistive switching and charge transport in silicon oxide memristor;Mikhaylov;Mat. Sci. Eng. B,2015

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