Mechanisms of colloidal ceria contamination and cleaning during oxide post CMP cleaning-Reference-Cited by-同舟云学术

Mechanisms of colloidal ceria contamination and cleaning during oxide post CMP cleaning

Published:2021-03 Issue: Volume:241 Page:111544
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Sahir Samrina,Yerriboina Nagendra Prasad,Han So-Young,Kim Tae-Gon,Mahadev Niraj,Park Jin-Goo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Minimization of chemical-mechanical planarization (CMP) defects and post-CMP cleaning;Zhang;J. Vac. Sci. Technol. B,1999

2. Shallow trench isolation chemical mechanical planarization: a review;Srinivasan;Ecs J. Solid State Sci. Technol.,2015

3. Chemical processes in glass polishing;Cook;J. Non-Cryst. Solids,1990

4. Effect of pH on ceria-silica interactions during chemical mechanical polishing;Abiade;J. Mater. Res.,2005

5. Abrasive for chemical mechanical polishing;Kim;Abrasive Technol.: Character. Appl.,2018

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailored electrostatic attraction force between anionic polymer and Si3N4 film in consecutive gate poly open CMP;Materials Science in Semiconductor Processing;2024-12

2. Systematic root cause analysis of ceria-induced defects during chemical mechanical planarization and cleaning;Journal of Manufacturing Processes;2024-10

3. Particle size dependence of nanoclustered ceria abrasives on surface activity and chemical mechanical planarization performance;Applied Surface Science;2024-08

4. A review on the development of ceria for chemical mechanical polishing;Powder Technology;2024-08

5. Investigation of thermal effects in bulk oxide chemical mechanical polishing;Precision Engineering;2024-06