Realization of 850V breakdown voltage LDMOS on Simbond SOI-Reference-Cited by-同舟云学术

Realization of 850V breakdown voltage LDMOS on Simbond SOI

Published:2012-03 Issue: Volume:91 Page:102-105
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wang Zhongjian,Cheng Xinhong,He Dawei,Xia Chao,Xu Dawei,Yu Yuehui,Zhang Dong,Wang Yanying,Lv Yuqiang,Gong Dawei,Shao Kai

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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5. Shengdong Hu, Bo Zhang, Zhaoji Li, in: IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008, pp. 1–4.

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