Effects of physico-chemical properties between poly(ethyleneimine) and silica abrasive on copper chemical mechanical planarization-Reference-Cited by-同舟云学术

Effects of physico-chemical properties between poly(ethyleneimine) and silica abrasive on copper chemical mechanical planarization

Published:2014-01 Issue: Volume:113 Page:50-54
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Seo Jihoon,Yoon Kwang Seob,Moon Jinok,Kim Kijung,Sigmund Wolfgang,Paik Ungyu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Converting Ceria Polyhedral Nanoparticles into Single-Crystal Nanospheres

2. Measurement Techniques of Sheet Resistance on Copper Defects after Chemical Mechanical Polishing

3. Modeling the Electrical Effects of Metal Dishing Due to CMP for On-Chip Interconnect Optimization

4. Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

5. Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction

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4. A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization;Journal of Materials Research;2021-01-15

5. Multi-objective optimization of tungsten CMP slurry for advanced semiconductor manufacturing using a response surface methodology;Materials & Design;2017-03