Pad roughness evolution during break-in and its abrasion due to the pad-wafer contact in oxide CMP-Reference-Cited by-同舟云学术

Pad roughness evolution during break-in and its abrasion due to the pad-wafer contact in oxide CMP

Published:2013-11 Issue: Volume:111 Page:21-28
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Vasilev Boris,Bott Sascha,Rzehak Roland,Bartha Johann W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. X. Xie, Physical understanding and modeling of chemical mechanical planarization in dielectric materials, Ph.D. thesis, Massachusetts Institute of Technology, 2007.

2. A.S. Lawing, Pad conditioning and textural effects in CMP, in: CMPMIC, 2005, p. 33.

3. S. Lawing, C. Juras, T. Tran, Pad conditioning and scale-up issues between 200mm and 300mm polishing, in: CMPMIC, 2003.

4. A. Lawing, Pad conditioning and removal rate in oxide cmp, in: CMPMIC, 2002, p. 310.

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