A new technique to analyze RTN signals in resistive memories-Reference-Cited by-同舟云学术

A new technique to analyze RTN signals in resistive memories

Published:2019-07 Issue: Volume:215 Page:110994
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

González-Cordero G.,González M.B.,Campabadal F.,Jiménez-Molinos F.,Roldán J.B.^ORCID

Funder

Spanish Ministry of Science and Universities

FEDER

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. $${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

2. Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise

3. Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

4. Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM

5. Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

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