Effect of plasma process-induced damage on bias temperature instability of MOSFETs-Reference-Cited by-同舟云学术

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Effect of plasma process-induced damage on bias temperature instability of MOSFETs

Published:2006-03 Issue:3 Volume:83 Page:415-422
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Jang T.S.,Ha M.H.,Yoo K.D.,Kang B.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Plasma charging damage mechanisms and impact on new technologies

2. S. Krishnan, A. Amerasekera, S. Rangan, S. Aur, in: 1998 IEDM Technical Digest, 1998, pp. 601–604.

3. B.P. Linder, N.W. Cheung, in: 3rd Symposium on Plasma Process-Induced Damage (P2ID), 1998, pp. 42–45.

4. K. Noguchi, K. Tokashiki, T. Horiuchi, H. Miyamoto, in: 1997 IEDM Technical Digest, 1997, pp. 441–444.

5. D. Park, C. Hu, in: 2nd Symposium on Plasma Process-Induced Damage (P2ID), 1997, pp. 15–18.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Method of extracting effective channel length for nano-scale n-MOSFETs;Solid-State Electronics;2009-10

2. Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs;Microelectronic Engineering;2008-08

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