1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment-Reference-Cited by-同舟云学术

1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment

Published:2015-11 Issue: Volume:147 Page:134-136
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Sindhuri V.,Son Dong-Hyeok,Lee Dong-Gi,Sakong SungHwan,Jeong Yoon-Ha,Cho In-Tak,Lee Jong-Ho,Kim Yong-Tae,Cristoloveanu Sorin,Bae Youngho,Im Ki-Sik,Lee Jung-Hee

Funder

Ministry of Education

MOTIE/KEIT

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

2. High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

3. Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

4. Characteristics of GaN and AlGaN/GaN FinFETs

5. Heterojunction-Free GaN Nanochannel FinFETs With High Performance

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