Investigation of oxide layer removal mechanism using reactive gases-Reference-Cited by-同舟云学术

Investigation of oxide layer removal mechanism using reactive gases

Published:2015-03 Issue: Volume:135 Page:17-22
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kim Hyun-Tae,Lim Jung-Soo,Kim Min-Su,Oh Hoon-Jung,Ko Dae-Hong,Kim Gyoo-Dong,Shin Woo-Gon,Park Jin-Goo

Funder

MOTIE

KSRC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Highly selective etching of silicon nitride over silicon and silicon dioxide

2. Influence of different etching mechanisms on the angular dependence of silicon nitride etching

3. Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology

4. Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition

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