Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures-Reference-Cited by-同舟云学术

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Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures

Published:2013-09 Issue: Volume:109 Page:31-34
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Tyagulskii I.P.,Tyagulskii S.I.,Nazarov A.N.,Lysenko V.S.,Cherkaoui K.,Hurley P.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

2. Charge trapping in ultrathin Gd2O3 high-k dielectric

3. Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures

4. Interrelation between surface states and transition layer defects in Si-SiO2 structures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influences of Gd Substitution on the Crystal Structure and Visible-Light-Driven Photocatalytic Performance of Bi2WO6;The Journal of Physical Chemistry C;2014-07-10

2. Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures;ECS Transactions;2014-03-24

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