Subthreshold slope modulation in G4-FET transistors-Reference-Cited by-同舟云学术

Subthreshold slope modulation in G4-FET transistors

Published:2004-04 Issue:1-4 Volume:72 Page:347-351
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Dufrene B.,Blalock B.,Cristoloveanu S.,Akarvardar K.,Higashino T.,Mojarradi M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. THE MULTIPLE-GATE MOS-JFET TRANSISTOR

2. S. Cristoloveanu, B. Blalock, F. Allibert, B.M. Dufrene, M. Mojarradi, in: Proceedings of the European Solid-State Device Research Conference, 32th, September, 2002, pp. 323–326

3. J. Pretet, F. Allibert, K. Akarvardar, G. Pananakakis, S. Cristoloveanu, in: Proceedings of the INFOS'03, 2003

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