Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate

Author:

Hmar Jehova Jire L.ORCID

Funder

University Grants Commission

UGC-BSR

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference53 articles.

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4. Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments;Zhang;Appl. Phys. Lett.,2014

5. The floating-gate non-volatile semiconductor memory-from invention to the digital age;Sze;J. Nanosci. Nanotechnol.,2012

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