Characterization of ITO etching by spontaneously evaporated fume of hydrogen chloride-Reference-Cited by-同舟云学术

Characterization of ITO etching by spontaneously evaporated fume of hydrogen chloride

Published:2013-03 Issue: Volume:103 Page:173-176
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Oh Sewook,Jung Hunsang,Kim Yo-Han,Kim Minkeun,Yoo Eunji,Choi Young Jin,Yoon Tae-Sik,Lee Hyun Ho

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. On the Mechanism of ITO Etching: The Specificity of Halogen Acids

2. On the Mechanism of ITO Etching in Halogen Acids: The Influence of Oxidizing Agents

3. Stephen A. Campbell, The science and engineering of microelectronic fabrication, pp. 252.

4. High Temperature Reactive Ion Etching of Indium‐Tin Oxide with HBr and CH 4 Mixtures

5. Dry etching characteristics of ITO thin films deposited on plastic substrates

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