Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics-Reference-Cited by-同舟云学术

Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics

Published:2011-06 Issue:6 Volume:88 Page:945-949
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hsieh Chih-Ren,Chen Yung-Yu,Lu Kwung-Wen,Lin Gray,Lou Jen-Chung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. International Technology Roadmap for Semiconductors, 2007. Available from: .

2. Y.S. Hisamune, K. Kanamori, T. Kubota, Y. Suzuki, M. Tsukiji, E. Hasegawa, A. Ishitani, T. Okazawa, in: Tech. Dig., Int. Electron Dev. Meet., Washington, USA, December 5–8, 1993, p. 19.

3. M. Kato, T. Adachi, T. Tanaka, A. Sato, T. Kobayashi, Y. Sudo, T. Morimoto, H. Kume, T. Nishida, K. Kimura, in: Tech. Dig., Int. Electron Dev. Meet., San Francisco, USA, December 11–14, 1994, p. 921.

4. T. Kobayashi, N. Mastsuzaki, A. Sato, A. Katayama, H. Kurata, A. Miura, T. Mine, Y. Goto, T. Morimoto, H. Kume, T. Kure, K. Kimura, in: Tech. Dig., Int. Electron Dev. Meet., Washington, USA, December 7–10, 1997, p. 275.

5. H. Shirai, T. Kubota, I. Honma, H. Watanabe, H. Ono, T. Okazawa, in: Tech. Dig., Int. Electron Dev. Meet., Washington, USA, December 10–13, 1995, p. 653.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluoridation of HfO2;Inorganic Chemistry;2021-03-05

2. A first-principles study of interfacial fluorination at the HfO2/Al2O3 interface in charge trapping memory devices;Journal of Applied Physics;2019-06-07

3. Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack;Materials;2014-03-20

4. The Impact of Tunnel Oxide Nitridation to Reliability Performance of Charge Storage Non-Volatile Memory Devices;Journal of Nanoscience and Nanotechnology;2014-02-01

5. Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory;Japanese Journal of Applied Physics;2013-07-01