The rise of metal halide perovskite memristors for edge computing-Reference-Cited by-同舟云学术

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The rise of metal halide perovskite memristors for edge computing

Published:2023-12 Issue:6 Volume:1 Page:100221
ISSN:2666-9986
Container-title:Device
language:en
Short-container-title:Device

Author:

Duan Tianwei^ORCID,Zha Jiajia,Lin Ning,Wang Zhongrui,Tan Chaoliang,Zhou Yuanyuan

Publisher

Elsevier BV

Reference124 articles.

1. Take it to the edge;Nat Electron,2019

2. Resistive switching materials for information processing;Wang;Nat. Rev. Mater.,2020

3. Brain-inspired computing needs a master plan;Mehonic;Nature,2022

4. Memristor-The missing circuit element;Chua;IEEE Trans. Circ. Theor.,1971

5. How we predicted the memristor;Chua;Nat. Electron.,2018

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact;The Journal of Physical Chemistry Letters;2024-07-22

2. Energy-efficient, stable, and temperature-tolerant neuromorphic device based on single crystals of halide perovskites;Cell Reports Physical Science;2024-07

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