Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization-Reference-Cited by-同舟云学术

Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization

Published:2023-07 Issue:1 Volume:1 Page:100004
ISSN:2666-9986
Container-title:Device
language:en
Short-container-title:Device

Author:

Gao Zhaomeng,Zhang Weifeng,Zhong Qilan,Zheng Yonghui,Lv Shuxian,Wu Qiqiao,Song Yanling,Zhao Shengjie,Zheng Yunzhe,Xin Tianjiao,Wang Yiwei,Wei Wei,Ren Xinqian,Yang Jianguo,Ge Chen,Tao Jiahua,Cheng Yan,Lyu Hangbing

Funder

Chinese Academy of Sciences

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference32 articles.

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3. Enhanced ferroelectricity in ultrathin films grown directly on silicon;Cheema;Nature,2020

4. Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 fifilms on Si;Chouprik;Microelectron. Eng.,2017

5. Polar switch;Esaki;IBM Tech. Discl. Bull.,1971

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