The first principle study and experimental of boron synergistic sulfur doping in diamond-Reference-Cited by-同舟云学术

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The first principle study and experimental of boron synergistic sulfur doping in diamond

Published:2020-09 Issue: Volume:24 Page:101021
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Li Shangsheng,Wang Jiankang,Hu Meihua,Li Mingjun,Liu Xianli,Su Taichao,Yu Kunpeng,Han Fei

Funder

Natural Science Foundation of Henan Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference43 articles.

1. Donor and acceptor states in diamond;Goss;Diamond Relat. Mater.,2004

2. Sulfur: a donor dopant for n-type diamond semiconductors;Sakaguchi;Phys. Rev. B,1999

3. Doping of diamond;Kalish;Carbon,1999

4. The growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system;Guo;Chin. Phys. B.,2020

5. Improvement of electron field emission properties of nanocrystalline diamond films by a plasma post-treatment process for cathode application in microplasma devices;Lin;J. Vac. Sci. Technol. B.,2016

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2. Pretreatment strategies of titanium substrates to modulate the electrochemical properties of CVD-grown Ti-doped diamond electrodes for dopamine detection;Surface and Coatings Technology;2023-08

3. Effects of high pressure and high temperature annealing on the characteristics of HPHT diamonds with high nitrogen content;Optical Materials;2023-03

4. N-type diamond semiconductor induced by co-doping selenium and boron;Computational Materials Science;2021-08

5. The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure;New Carbon Materials;2020-09

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