Effect of vacancy and pyridinic-like X-atom (X = Mg, B, C, and N) doping on the electronic and magnetic properties of antimonene: First-principles insights
Author:
Funder
Taif University
Deanship of Scientific Research, King Saud University
Publisher
Elsevier BV
Subject
Materials Chemistry,Mechanics of Materials,General Materials Science
Reference19 articles.
1. Atomically thin arsenene and antimonene: semimetal–semiconductor and indirect–direct band‐gap transitions;Zhang;Angew. Chem.,2015
2. Anisotropic transport property of antimonene MOSFETs;Yin;ACS Appl. Mater. Interfaces,2020
3. Performance of arsenene and antimonene double-gate MOSFETs from first principles;Pizzi;Nat. Commun.,2016
4. Antimonene: a monolayer material for ultraviolet optical nanodevices;Singh;J. Mater. Chem. C,2016
5. Atomically thin group V elemental films: theoretical investigations of antimonene allotropes;Wang;ACS Appl. Mater. Interfaces,2015
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