Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range
Author:
Funder
South African Nuclear Energy Corporation
National Research Foundation
Publisher
Elsevier BV
Subject
Materials Chemistry,Mechanics of Materials,General Materials Science
Reference41 articles.
1. SiC-IrSi3 for high oxidation resistance;Camarano;Materials,2020
2. Oxidation behaviour of silicon carbide - a review;Roy;Rev. Adv. Mater. Sci.,2014
3. New advanced SiC-based composite materials for use in highly oxidizing environments: synthesis of SiC/IrSi3;Camarano;J. Eur. Ceram. Soc.,2020
4. Characterization of ash particles with a microheater and gas-sensitive SiC field-effect transistors;Bur;J. Sens. Sens. Syst.,2014
5. SiC materials - progress, status, and potential roadblocks;Powell;Proc. IEEE,2002
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