Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range

Author:

Njoroge E.,Hlatshwayo T.,Mokgadi T.,Thabethe T.,Skuratov V.A.

Funder

South African Nuclear Energy Corporation

National Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference41 articles.

1. SiC-IrSi3 for high oxidation resistance;Camarano;Materials,2020

2. Oxidation behaviour of silicon carbide - a review;Roy;Rev. Adv. Mater. Sci.,2014

3. New advanced SiC-based composite materials for use in highly oxidizing environments: synthesis of SiC/IrSi3;Camarano;J. Eur. Ceram. Soc.,2020

4. Characterization of ash particles with a microheater and gas-sensitive SiC field-effect transistors;Bur;J. Sens. Sens. Syst.,2014

5. SiC materials - progress, status, and potential roadblocks;Powell;Proc. IEEE,2002

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