Electrical, optical and morphological properties of Au/n-Ge heterostructures by using cobalt phthalocyanine (CoPc) interlayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Mechanics of Materials,General Materials Science
Reference46 articles.
1. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates
2. Impacts of ITO interlayer thickness on metal/n-Ge contacts
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4. Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices
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1. Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer;Physica Scripta;2024-08-23
2. Optical, morphological, structural and photo-electrical properties of Ni-phthalocyanine/n-Ge heterojunction for optoelectronic applications;Thin Solid Films;2024-08
3. Structural, chemical, optical, electrical and photodiode properties of Au/ZnPc/undoped-InP MPS-type diode using a ZnPc interlayer;Materials Science and Engineering: B;2024-07
4. The inventive manufacturing and characterization of Au/BG/p-Si/Al devices for solar cell applications;Applied Physics A;2024-05-05
5. Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications;Materials Science and Engineering: B;2024-02
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