Structures and electronic properties of single-walled silicon nanotubes (6,m) under external electric field by SCC-DFTB calculations

Author:

Wu Lijun,Wang Zhiqing,Han Yan

Funder

Natural Science Foundation of Liaoning Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference58 articles.

1. Ab initio calculations for a hypothetical material: Silicon nanotubes;Fagan;Phys. Rev. B,2000

2. DC and RF analysis of vertical 3D p-type silicon nanotube FET for low power applications;Anucia;Int. J. Electron.,2021

3. RF analysis of silicon nanotube FET for ultra-low-power applications, Lecture Notes in;Josephine Anucia;Electr. Eng.,2021

4. Performance enhancement of junctionless silicon nanotube FETs using gate and dielectric engineering;Scarlet;J. Comput. Electron.,2021

5. Effect of strain in silicon nanotube FET devices for low power applications;Avtar;Eur. Phys., J. Appl. Phys.,2019

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