Formation mechanism of a silicon-on-nothing structure using the level-set approach and molecular dynamics

Author:

Hao Xiuchun,Wang Jiawei,He Peiling

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference26 articles.

1. M. Jurczak, T. Skotnicki, M. Paoli, B. Tormen, J.-L. Regolini, C. Morin, A. Schiltz, J. Martins, R. Pantel, and J. Galvier, SON (silicon on nothing)–a new device architecture for the ULSI era, 1999 Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, Japan, Jun. 14–16, 1999, New York, 1999, pp. 29–30.

2. Silicon-on-nothing (SON)–an innovative process for advanced CMOS;Jurczak;IEEE Trans. Electron Devices,2000

3. SON (silicon-on-nothing) P-MOSFETs with totally silicided (CoSi2) polysilicon on 5-nm-thick Si-films: the simplest way to integration of metal gates on thin FD channels;Monfray;IDEM Tech. Dig. Proc.,2002

4. Application of silicon on nothing structure for developing a novel capacitive absolute pressure sensor;Hao;IEEE Sens. J.,2014

5. Hydrogen annealed silicon-on-insulator;Sato;Appl. Phys. Lett.,1994

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