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The effect of graphene and reduced graphene oxide on the resistive switching behavior of La0.7Ba0.3MnO3

  • Published:2021-03 Issue: Volume:26 Page:102040
  • ISSN:2352-4928
  • Container-title:Materials Today Communications
  • language:en
  • Short-container-title:Materials Today Communications

Author:

Kumari Karuna,Thakur Ajay D.,Ray S.J.ORCID

Funder

Department of Science and Technology, Ministry of Science and Technology, India

UGC-DAE Consortium for Scientific Research, University Grants Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference44 articles.

1. Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures;Roman Acevedo;Appl. Phys. Lett.,2017

2. Recent progress and next directions for embedded MRAM technology;Gallagher,2019

3. Phase change thin films for non-volatile memory applications;Lotnyk;Nanoscale Adv.,2019

4. Ferroelectric Hf0 . 5Zr0 . 5O2 thin films: a review of recent advances;Kim;JOM,2019

5. Overview of resistive random access memory (RRAM): materials, filament mechanisms, performance optimization, and prospects;Wang;Physica Status Solidi (RRL) – Rapid Res. Lett.,2019
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