Temperature dependence of optical centers in 200 keV electron irradiated β-Ga2O3-Reference-Cited by-同舟云学术

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Temperature dependence of optical centers in 200 keV electron irradiated β-Ga2O3

Published:2021-12 Issue: Volume:29 Page:102764
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Wang Kaiyue,Xiao Zunpeng,Guo Ruiang,Jia Gangyuan,Zhang Yufei,Wang Hongxing,Wu Yaqiao,Tian Yuming

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference24 articles.

1. Study on the optical properties of β-Ga2O3 films grown by MOCVD;Hu;J. Mater. Sci. Mater. Electron.,2017

2. Transparent conductive electrodes of β-Ga2O3/Ag/β-Ga2O3 multilayer for ultraviolet emitters;Kim;J. Nanosci. Nanotechnol.,2019

3. Synthesis, morphology, optical and photocatalytic performance of nanostructured β-Ga2O3;Girija;Mater. Res. Bull.,2013

4. Some electrical properties of the semiconductor β-Ga2O3;Lorenz;J. Phys. Chem. Solids,1967

5. Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg;Luchechko;Nucl. Instrum. Methods B,2019

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of Anisotropic Complex Conductivity of β-Ga2O3;Journal of Infrared, Millimeter, and Terahertz Waves;2022-08

2. Anisotropies of angle-resolved polarized Raman response identifying in low miller index β-Ga2O3 single crystal;Applied Surface Science;2022-04

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