Analysis of current distribution on IGBT under unclamped inductive switching conditions

Author:

Iwahashi Yohei,Mizuno Yoshihito,Hara Masafumi,Tagami Ryuzo,Ishigaki Masanori

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions;Shen;Proc IEEE Trans Ind Appl,2000

2. Shoji T et al. Investigation on current filamentation of IGBTs under unclamped inductive switching conditions. In: Proceedings of ISPSD’05; 2005. p.227–230.

3. Riccio M et al. Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography. In: Proceedings of ESREF’10; 2010. p.1725–1730.

4. Mizuno Y et al. Investigations of inhomogeneous operation of IGBTs under unclamped inductive switching condition. In: Proceedings of ISPSD’10; 2010. p.137–140.

5. Thermally-driven motion of current filaments in ESD protection devices;Pogany;Proc Solid State Electron,2005

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