Via high resistance failure analysis of LSI devices induced by multiple factors related to process and design-Reference-Cited by-同舟云学术

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Via high resistance failure analysis of LSI devices induced by multiple factors related to process and design

Published:2012-12 Issue:12 Volume:52 Page:2975-2981
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Naoe Takuya,Komoda Hirotaka,Ikeuchi Tamao,Yokoyama Kohichi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Chang YC et al. In: VMIC conference; June 27–29, 2000. p. 297–301.

2. Dai JY et al. In: Proceedings of 8th IPFA, Singapore; 2001. p. 183–6.

3. Drizlikh Sergai, Francis Thomas. In: IEEE/SEMI advanced semiconductor manufacturing conference; 2004. p. 162–4.

4. Shim Yeonah et al. In: Proceeding of SPICE, vol. 6925; 2008. p. 692513.1–8.

5. Consalvo C et al. In: VMIC conference; September 23–25, 2003. p. 567–70.

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