A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects-Reference-Cited by-同舟云学术

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A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects

Published:2012-07 Issue:7 Volume:52 Page:1328-1331
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chang Yang-Hua,Huang Chun-Teng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Low turn-on voltage and high-current InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistors;Chen;IEEE Electron Device Lett,2008

2. Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi. Characterization of InAlAs/In0.25Ga0.75As0.72Sb0.28/InGaAs double heterojunction bipolar transistors. In: International conference on indium phosphide & related materials (IPRM); 2010.

3. Band parameters for III–V compound semiconductors and their alloys;Vurgaftman;J Appl Phys,2001

4. Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors;Wang;IEEE Electron Device Lett,2010

5. An investigation of the effect of graded layers and tunneling on the performance of AIGaAs/GaAs heterojunction bipolar transistors;Grinberg;IEEE Trans Electron Devices,1984

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