Author:
Pajona O.,Aupetit-Berthelemot C.,Lefevre R.,Dumas J.M.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Marsh P et al. Reliability of metamorphic HEMTs on GaAs substrates. In: Proceedings of 2001 GaAs reliability workshop, Baltimore, MD, p. 119–20.
2. Kao M et al. High Performance Metamorphic HEMTs on 100-mm GaAs Substrate. 2000 international conference on GaAs manufactoring technology, Washington, DC, p. 225-7.
3. Low noise In0.32 (AlGa)0.68/In0.43Ga0.57 As metamorphic HEMT on GaAs Substrate with 850 mW/mm output power density;Whelan;IEEE Electron Dev Lett,2000
4. InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage;Zaknoune;IEEE Electron Dev Lett,1998
5. Characteristics of In0,52Al0,48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels;Chen;Solid State Electron,2004
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19