Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler–Nordheim electron injection-Reference-Cited by-同舟云学术

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Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler–Nordheim electron injection

Published:2006-12 Issue:12 Volume:46 Page:2044-2048
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Yang B.L.,Kwok Paul C.K.,Lai P.T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Ionizing radiation effects in MOS device and circuits;Ma,1989

2. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

3. SiC devices: physics and numerical simulation

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

5. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

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