Author:
Miranda E.,Molina J.,Kim Y.,Iwai H.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Characterization of La2O3 and Yb2O3 thin films for high-K gate insulator application;Ohmi;J Electrochem Soc,2003
2. Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si (100) interfacial transition layer;Nohira;Appl Surf Science,2004
3. Chin A, Wu Y, Chen S, Liao C, Chen W. High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5–10 Å. Symposium on VLSI Technology 2000, p. 16–17.
4. Direct tunneling leakage current and scalability of alternative gate dielectrics;Yeo;Appl Phys Lett,2002
5. High-K gate dielectrics: Current status and materials properties considerations;Wilk;J Appl Phys,2001
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献