Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs-Reference-Cited by-同舟云学术

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Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs

Published:2017-08 Issue: Volume:75 Page:135-141
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Peng Chao,En Yunfei,Zhang Zhengxuan,Liu Yuan,Lei Zhifeng

Funder

National Postdoctoral Program for Innovative Talents

Distinguished Young Scientist Program of Guangdong Province

Science and Technology Research Project of Guangdong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Space, atmospheric, and terrestrial radiation environments;Barth;IEEE Trans. Nucl. Sci.,2003

2. Radiation hardness assurance testing of microelectronic devices and integrated circuits: Radiation environments, physical mechanisms, and foundations for hardness assurance;Schwank;IEEE Trans. Nucl. Sci.,2013

3. Technology downscaling worsening radiation effects in bulk: SOI to the rescue;Roche,2013

4. Radiation effects in SOI technologies;Schwank;IEEE Trans. Nucl. Sci.,2003

5. Silicon Processing for the VLSI era;Wolf,2002

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methodologies for Millimeter-Wave Circuit Design in Extreme Environments;Lecture Notes in Electrical Engineering;2020

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