Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

Author:

Ahn W.ORCID,Shin S.H.,Jiang C.,Jiang H.,Wahab M.A.,Alam M.A.

Funder

National Science Foundation through the NCN-NEEDS program

Semiconductor Research Corporation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference78 articles.

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5. Future Directions;Khakifirooz,2008

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