Modelling the temperature influence on dc characteristics of the IGBT-Reference-Cited by-同舟云学术

Modelling the temperature influence on dc characteristics of the IGBT

Published:2017-12 Issue: Volume:79 Page:96-103
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Górecki Paweł,Górecki Krzysztof,Zarębski Janusz

Funder

Polish science budget resources

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Fundamentals of Power Electronics;Ericson,2001

2. Power Electronic Handbook;Rashid,2007

3. Pulse-width Modulated DC-DC Power Converters;Kazimierczuk,2008

4. Introduction of New Generation Field-stop Shorted-anode IGBT;Yeon,2014

5. Sattar A., Insulated Gate Bipolar Transistor (IGBT) Basics. IXYS Corporation, (Application Note IXAN0063) www.ixys.com/Documents/AppNotes/IXYS_IGBT_Basic_I.pdf.

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