Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies-Reference-Cited by-同舟云学术

Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies

Published:2017-09 Issue: Volume:76-77 Page:159-163
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Rousselin T.,Hubert G.,Régis D.,Gatti M.,Bensoussan A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

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4. “Multiple Cell Upsets as the Key Contribution to the Total SER of 65nm CMOS SRAMs and Its Dependence on Well Engineering.” IEEE Transactions on Nuclear Science;Gasiot,2007

5. “On the Correlation between Static Noise Margin and Soft Error Rate Evaluated for a 40nm SRAM Cell.” 2013 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS);Vatajelu,2013

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