Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget-Reference-Cited by-同舟云学术

Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget

Published:2018-01 Issue: Volume:80 Page:306-311
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hong Eun-Ki,Cho Won-Ju

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Short-channel effect in fully depleted SOI MOSFETs;Young;IEEE Trans. Electron Dev.,1989

5. Device Innovation and Material Challenges at the Limits of CMOS Technology, IEDM Tech. Dig. 135;Pethe,2005

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