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2. NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-pm gate CMOS generation;Kimizuka,2000
3. NBTI mechanism in ultra-thin gate dielectric -nitrogen-originated mechanism in SiON;Mitani,2002
4. A thorough investigation of MOSFETs NBTI degradation;Huard,2005
5. On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?;Mahapatra,2007