MIMC reliability and electrical behavior defined by a physical layer property of the dielectric-Reference-Cited by-同舟云学术

MIMC reliability and electrical behavior defined by a physical layer property of the dielectric

Published:2008-08 Issue:8-9 Volume:48 Page:1553-1556
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ackaert J.,Charavel R.,Dhondt K.,Vlachakis B.,De Schepper L.,Millecam M.,Vandevelde E.,Bogaert P.,Iline A.,De Backer E.,Vlad A.,Raskin J.-P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Matching properties and voltage and temperature dependence of MOS capacitors;McCreary;IEEE J Solid-State Circ,1981

2. Thin gate and analog capacitor dielectrics for submicron device fabrication;Tay;J Electron Mater,1992

3. Kaya C, Tigelaar H, Paterson J, de Wit M, Fattaruso J, Kiriakai S et al. Polycide/metal capacitors for high precision A/D converters. In: IEDM tech dig; 1988. p. 782–785.

4. Yin A, White J, Karroy A, Hu C. Integration of polycide/metal capacitors in advanced device fabrication. In: Proceedings of the fifth international conference solid-state and integrated circuit technology; 1998. p. 131–134.

5. Yota J, Ramanathan R, Arreaga J, Dai P, Cismaru C, Burton R et al. Development and characterization of a 600Å PECVD Si3N4 high density MIM capacitor for InGaP/GaAs HBT applications. In: International conference on compound semiconductor; 2003.

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