Author:
Banu V.,Brosselard P.,Jordá X.,Montserrat J.,Godignon P.,Millán J.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference3 articles.
1. Rupp R, Treu M, Voss S, Bjork F, Reimann T. “2nd Generation” SiC Schottky diodes: a new benchmark in SiC device ruggedness. In: 2006 IEEE international symposium on power semiconductor devices and IC’s; 2006. p. 1–4.
2. Reliability considerations for recent Infineon SiC diode releases;Holz;Microelectron Reliab,2007
3. Brosselard P, Jordà X, Vellvehí M, Perez Tomas A, Godignon P, MJ. 1.2kV Rectifiers thermal behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes. In: European power electronic conference, Aalborg DK; 2007.
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