Acceleration factors for THB induced degradation of AlGaAs/InGaAs pHEMT devices-Reference-Cited by-同舟云学术

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Acceleration factors for THB induced degradation of AlGaAs/InGaAs pHEMT devices

Published:2008-07 Issue:7 Volume:48 Page:990-993
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Marchut Leslie,Whitman Charles S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Steady state temperature humidity bias life test. EIA/JESD22-A101-B.

2. Highly-accelerated temperature and humidity stress test (HAST). JESD22-A110-B.

3. Ersland P, Jen HR, Yang X. Lifetime acceleration model for HAST tests of a pHEMT process. GaAs Reliability Workshop; 2003. p. 3–6.

4. Roesch WJ. Thermal acceleration of compound semiconductors in humidity. ROCS Workshop; 2005. p. 111–21.

5. Degradation of InGaAs P-InP lasers in hot-humid ambients: determination of temperature-humidity-bias acceleration factors;Osenbach;IEEE Photon Technol Lett,1995

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