Contoured device sample preparation technique for ±5μm remaining silicon thicknesses that meets solid immersion lens requirements-Reference-Cited by-同舟云学术

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Contoured device sample preparation technique for ±5μm remaining silicon thicknesses that meets solid immersion lens requirements

Published:2013-09 Issue:9-11 Volume:53 Page:1434-1438
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Richardson Chris,Liechty Gary,Smith Clay,Karow Michael

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Perdu P, Desplats R, Beaudoin F. In: Comparative study of sample preparation techniques for backside analysis. ISTFA 2000. Proceedings; 2000.

2. Scott D, O’Donnell E, Malik T, Jain R. Global die ultra thin silicon for backside diagnostics and circuit edit. In: ISTFA 2009. Proceedings; 2009.

3. Mulholland MM, Wadell RP. A method of stress reduction during silicon thinning. In: ISTFA 2011. Proceedings; 2011.

4. Colvin J, Patel H, Hazeldine T. Stress reduction during silicon thinning using thermal relaxation and 3D curvature correction techniques. In: ISTFA 2012. Proceedings; 2012.

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