Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications-Reference-Cited by-同舟云学术

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Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Published:2013-09 Issue:9-11 Volume:53 Page:1247-1251
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Crespo-Yepes A.,Martín-Martínez J.,Rodríguez R.,Nafría M.,Aymerich X.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Linder BP, Cartier E, Krishnan S, Stathis JH. The effect of interface thickness of high-k/metal gate stacks on FET dielectric reliability. In: 47th International Reliability Physics Symposium; 2009. pp. 510–3.

2. The impact of gate-oxide breakdown on SRAM stability;Rodriguez;IEEE Electron Device Lett,2002

3. A physics-based deconstruction of the percolation model of oxide breakdown;Suñé;Microelectron Eng,2007

4. Exploratory observations of post-breakdown conduction in polycrystalline–silicon and metal-gate thin-oxide metal–oxide–semiconductor capacitors;Nafria;J Appl Phys,1993

5. Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs;Crespo-Yepes;Solid-State Electron,2011

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