Author:
Moreau C.,Helleye P. Le,Ruelloux D.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. (CELAR), Infrared technologies characterization in CELAR;Burgaud;CR Académie des Sciences,2003
2. Huguet P, Pataut G et al. (UMS), Space evaluation of P-HEMT MMIC process PH15. European Space Components Conference (2000), p. 91–5.
3. Ismail N, Malbert N, Labat N et al. (IXL), Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. (ESREF 2005), Microelectronics Reliability 45:1611–6.
4. Marsetz W, Schlechtweg M. (IAF) et al., High performance double recessed AlGaAs/InGaAs PHEMTs for microwave power applications. (1998), Proceedings of 27th Microwave Conference, pp. 1030–4.
5. Verzellesi G, Meneghesso G. (University of Modena and Padova) et al., DC to RF dispersion in GaAs and GaN based heterostructure FETs: performance and reliability issues. (ESREF 2005), Microelectronics Reliability 45:1585–92.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献