Read disturb in flash memories: reliability case-Reference-Cited by-同舟云学术

Read disturb in flash memories: reliability case

Published:2006-09 Issue:9-11 Volume:46 Page:1439-1444
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Tanduo P.,Cola L.,Testa S.,Menchise M.,Mervic A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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3. A New Reliability Model for Post-Cycling Charge Retention of Flash Memories;Belgal;IEEE,2002

4. Novel Read Disturb Failure Mechanism Induced by Flash Cycling;Brand;IEEE IRPS,1993

5. Modeling and Simulation of Stress Induced Leakage Current in Ultrathin SiO2 Films;Riccò;IEEE Transactions On Electron Devices,1998

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3. Reliability Tradeoffs and Scaling Issues of Read Drain Bias in nor Flash Memory;IEEE Transactions on Electron Devices;2009-09

4. On the Scaling of Flash Cell Spacer for Gate Disturb and Charge Retention Optimization;IEEE Transactions on Electron Devices;2009-09

5. Drain Read Disturb Assessment of NOR Flash Memory;2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA);2008-04