Measurement and analysis of contact resistance in wafer probe testing-Reference-Cited by-同舟云学术

Measurement and analysis of contact resistance in wafer probe testing

Published:2007-07 Issue:7 Volume:47 Page:1086-1094
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Liu D.S.,Shih M.K.,Huang W.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

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2. Greg Hotchkiss, Greg Ryan, Willmar Subido, Jerry Broz, Scott Mitchell, Rey Rincon, et al. Effect of Probe Damage on Wire Bond Integrity, IEEE Elect Compon Technol Conf, 2001.

3. Jerry J. Broz, Reynaldo M. Rincon, Probe contact resistance variations during elevated temperature wafer test, IEEE ITC Int Test Conf 1999: 396–405.

4. Highly reliable probe card for wafer testing;Maekawa;Elect Compon Technol Conf,2000

5. Low contact force probing on copper electrodes;Kenichi;IEEE ITC Int Test Conf,2002

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