Author:
Ho Chia-Huai,Chang-Liao Kuei-Shu,Huang Ya-Nan,Wang Tien-Ko,Lu T.C.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Investigation of channel hot electron injection by localized charge-trapping nonvolatile memory devices;Lusky;IEEE Trans Electron Dev,2004
2. Fast tunneling programming of nonvolatile memories;Versari;IEEE Trans Electron Dev,2000
3. An enhanced erase mechanism during channel Fowler–Nordheim tunneling in flash EPROM memory devices;Chan;IEEE Electron Dev lett,1999
4. T. Ohnakado, K. Mitsunaga, M. Nunoshita. Novel electron injection method using band-to-band tunneling induced hot electrons (BBHE) for flash memory with a P-channel cell. In: Electron devices meeting; 1995. p. 279.
5. New programming and erasing schemes for P-channel flash memory;Park;IEEE Electron Dev Lett,2000
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