Localization and physical analysis of a complex SRAM failure in 90nm technology

Author:

Qian Zhongling,Siegelin Frank,Tippelt Birgit,Müller Stefan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Egger P, Burmer C. SRAM Failure Analysis Strategy, Proceeding from the 29th International Symposium for Testing and Failure Analysis ISTFA 2003.

2. Grützner M. Advanced Electrical Analysis of Embedded Memory Cells Using Atomic Force Probing, Proceedings of the 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2005.

3. Mulder R, Subramanian S, Widener E, Chrastecky T. Improved SRAM 6T Cell failure Analysis using McSpice Bit Cell Defect Modeling, Proceedings from the 29th International Symposium for Testing and Failure Analysis ISTFA 2003.

4. Qian Z-L, Brillert C, Burmer C. Improved of Soft Defect Localization (SDL) in Advanced CMOS Devices, Proceedings of the 4th European Workshop on Photonic Failure Analysis, 2006.

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